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CY14B101LA-BA25XI

Cypress Semiconductor Corp

CY14B101LA-BA25XI

Memory

RoHS: Compliant

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RoHS

Compliant

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Specifications

Nominal Supply Current
70mA
Density
1 Mb
Memory Format
NVSRAM
Ambalaj
Tray
Contact Plating
Copper, Silver, Tin
Besleme Gerilimi
3V
Tepe Reflow Sıcaklığı (°C)
260
Memory Width
8
Terminal Sayısı
48
Terminal Kaplaması
Tin/Silver/Copper (Sn/Ag/Cu)
Memory Size
1Mb 128K x 8
Data Bus Width
8b
ECCN Kodu
EAR99
Maks. Oturma Yüksekliği
1.2mm
Operating Supply Voltage
3V
Temel Parça No
CY14B101
Memory Interface
Parallel
Pin Sayısı
48
Besleme Gerilimi
2.7V~3.6V
Write Cycle Time Word Page
25ns
Terminal Pozisyonu
BOTTOM
Yayın Yılı
2009
Qualification Status
Not Qualified
Organization
128KX8
Uzunluk
10mm
Operating Mode
ASYNCHRONOUS
Fonksiyon Sayısı
1
Access Time Max
25 ns
Tepe Reflow Süresi (maks. sn)
30
JESD-609 Kodu
e1
Kılıf / Paket
48-TFBGA
Fabrika Tedarik Süresi
13 Weeks
Supply Voltagemin Vsup
3.6V
Çalışma Sıcaklığı
-40°C~85°C TA
Parça Durumu
Active
Memory Types
Non-Volatile
Word Size
8b
Montaj
Surface Mount
Standby Currentmax
0.005A
Terminal Adımı
0.75mm

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