C3D10060G

Specifications

Yükseklik

4.572mm

Montaj

Surface Mount

Capacitance Vr F

480pF @ 0V 1MHz

Current Average Rectified Io

29A DC

Forward Voltage

1.8V

Genişlik

10.312mm

Current Reverse Leakage Vr

50μA @ 600V

Max Forward Surge Current Ifsm

90A

Parça Durumu

Active

Diode Type

Silicon Carbide Schottky

Fabrika Tedarik Süresi

6 Weeks

Max Repetitive Reverse Voltage Vrrm

600V

Peak Reverse Current

50μA

Voltage Dc Reverse Vr Max

600V

Voltage Forward Vf Max If

1.8V @ 10A

Yayın Yılı

2009

Speed

No Recovery Time > 500mA (Io)

Operating Temperature Junction

-55°C~175°C

Montaj Tipi

Surface Mount

Maks. Çalışma Sıcaklığı

175°C

Average Rectified Current

10A

Uzunluk

11.05mm

Element Configuration

Single

Max Reverse Voltage Dc

600V

Radyasyon Dayanımı

No

Reverse Recovery Time

0 s

Pin Sayısı

2

Min. Çalışma Sıcaklığı

-55°C

Ambalaj

Tube

Tedarikçi Cihaz Paketi

TO-263-2

Peak Nonrepetitive Surge Current

250A

Reach Svhc

Unknown

RoHS Durumu

RoHS Compliant

Forward Current

14A

Max Power Dissipation

136.3W

Max Surge Current

250A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Seri

Z-Rec®

Max Reverse Leakage Current

50μA