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Comchip Technology

MMBT5551-G

RF BJT Transistors

RoHS: Compliant

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Specifications

Ihs Manufacturer
COMCHIP TECHNOLOGY CO LTD
Dc Current Gainmin Hfe
50
Risk Rank
7.87
Transistor Element Material
SILICON
Tip
RF Bipolar Power
Transition Frequencynom Ft
100 MHz
Transistor Application
SWITCHING
Jesd30 Code
R-PDSO-G3
Package Body Material
PLASTIC/EPOXY
Part Life Cycle Code
Not Recommended
Rohs Code
Yes
Terminal Formu
GULL WING
RoHS
Details
Tepe Reflow Süresi (maks. sn)
30
Number Of Elements
1
Collector Currentmax Ic
0.6 A
Seri
MMBT5551
Collectoremitter Voltagemax
160 V
REACH Uyumluluk Kodu
compliant
JESD-609 Kodu
e3
Configuration
SINGLE
Ambalaj
MouseReel
Terminal Pozisyonu
DUAL
Fabrika Paket Adedi
3000
Package Style
SMALL OUTLINE
Reflow Temperaturemax S
30
Terminal Kaplaması
TIN
Yüzey Montaj
YES
Polaritychannel Type
NPN
Package Description
SMALL OUTLINE, R-PDSO-G3
Üretici Parça No
MMBT5551-G
Number Of Terminals
3
Package Shape
RECTANGULAR
Tepe Reflow Sıcaklığı (°C)
260
Transistor Type
Bipolar Power

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