CTLDM303N-M832DS TR

Specifications

Power Max

1.65W

Parça Durumu

Obsolete

Transistor Application

SWITCHING

Vgsth Max Id

1.2V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain Currentmax Abs Id

3.6A

ECCN Kodu

EAR99

Number Of Elements

2

Gate Charge Qg Max Vgs

13nC @ 4.5V

Current Continuous Drain Id25

3.6A

Rds On Max Id Vgs

40m Ω @ 1.8A, 4.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

2 N-Channel (Dual)

Jesd30 Code

R-PDSO-N8

Montaj Tipi

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Yayın Yılı

2014

Fet Feature

Standard

Drain To Source Voltage Vdss

30V

HTS Kodu

8541.29.00.95

REACH Uyumluluk Kodu

compliant

Drainsource On Resistancemax

0.078Ohm

Input Capacitance Ciss Max Vds

590pF @ 10V

Case Connection

DRAIN

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30V

Kılıf / Paket

8-TDFN Exposed Pad

Ambalaj

Cut Tape (CT)

Yüzey Montaj

YES

Terminal Formu

NO LEAD

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

6 Weeks