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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yüzey Montaj
- NO
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Ambalaj
- Bulk
- Collectorbase Capacitancemax
- 1pF
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Power Max
- 200mW
- Frequency Transition
- 2GHz
- Number Of Elements
- 1
- Power Dissipationmax Abs
- 0.3W
- Transistor Element Material
- SILICON
- Jesd30 Code
- O-MBCY-W4
- Montaj Tipi
- Through Hole
- Kılıf / Paket
- TO-206AF, TO-72-4 Metal Can
- Noise Figure Db Typ F
- 4.5dB @ 200MHz
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 3mA 1V
- Çalışma Sıcaklığı
- -65°C~200°C TJ
- Transistor Type
- NPN
- Voltage Collector Emitter Breakdown Max
- 12V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Currentcollector Ic Max
- 50mA
- Gain
- 15dB
- Terminal Formu
- WIRE
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- AMPLIFIER
- Transition Frequency
- 900MHz
- Parça Durumu
- Active
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Configuration
- SINGLE
- Vcesatmax
- 0.4 V
- Fabrika Tedarik Süresi
- 24 Weeks
- Terminal Sayısı
- 4
- Terminal Pozisyonu
- BOTTOM
- JESD-609 Kodu
- e3
- Polaritychannel Type
- NPN
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