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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- 2 PNP (Dual)
- Power Max
- 600mW
- Dc Current Gain Hfe Min Ic Vce
- 135 @ 1mA 5V
- Transition Frequency
- 200MHz
- Terminal Sayısı
- 6
- Montaj Tipi
- Through Hole
- Transistor Application
- AMPLIFIER
- JESD-609 Kodu
- e0
- Number Of Elements
- 2
- Ambalaj
- Bulk
- Jesd30 Code
- O-MBCY-W6
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- RoHS Durumu
- Non-RoHS Compliant
- Power Dissipationmax Abs
- 0.4W
- REACH Uyumluluk Kodu
- not_compliant
- Terminal Formu
- WIRE
- Qualification Status
- Not Qualified
- Additional Feature
- LOW NOISE
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yüzey Montaj
- NO
- Transistor Element Material
- SILICON
- Polaritychannel Type
- PNP
- Voltage Collector Emitter Breakdown Max
- 45V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- HTS Kodu
- 8541.21.00.75
- Kurşunsuz Kodu
- no
- Configuration
- SEPARATE, 2 ELEMENTS
- Currentcollector Ic Max
- 300mA
- Kılıf / Paket
- TO-78-6 Metal Can
- Terminal Pozisyonu
- BOTTOM
- Operating Temperature Max
- 175°C
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2017
- Parça Durumu
- Obsolete
- Frequency Transition
- 200MHz
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
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