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2N918

Central Semiconductor

2N918

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
15V
Frequency Transition
600MHz
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Kılıf / Paket
TO-72
Parça Durumu
Active
Polarity
NPN
Fabrika Tedarik Süresi
12 Weeks
Ambalaj
Bulk
Transition Frequency
600MHz
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Maks. Çalışma Sıcaklığı
150°C
Collectoremitter Saturation Voltage
1V
Dc Current Gainmin Hfe
20
Number Of Elements
1
Yayın Yılı
2012
Jesd30 Code
O-MBCY-W4
Transistor Application
AMPLIFIER
Emitter Base Voltage Vebo
3V
Terminal Formu
WIRE
RoHS Durumu
RoHS Compliant
Element Configuration
Single
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Min. Çalışma Sıcaklığı
-65°C
ECCN Kodu
EAR99
Kurşunsuz
Lead Free
Gain Bandwidth Product
600MHz
Power Dissipation Max
200mW
Collector Base Voltage Vcbo
30V
Terminal Pozisyonu
BOTTOM
Montaj
Through Hole
Continuous Collector Current
50mA
Collectorbase Capacitancemax
3pF
Kurşunsuz Kodu
no
HTS Kodu
8541.21.00.75
Max Collector Current
50mA
Qualification Status
Not Qualified
Collector Emitter Voltage Vceo
15V
Terminal Sayısı
4
Hfemin
20
JESD-609 Kodu
e0

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