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2N5770

Central Semiconductor

2N5770

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
50mA
Akım Değeri
50mA
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Number Of Elements
1
Transistor Type
NPN
Pin Sayısı
3
JESD-609 Kodu
e0
Gain Bandwidth Product
900MHz
Montaj
Through Hole
Gain
15dB
Min. Çalışma Sıcaklığı
-65°C
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
3V
Voltage Collector Emitter Breakdown Max
15V
Parça Durumu
Active
Element Configuration
Single
Ambalaj
Bulk
Maks. Çalışma Sıcaklığı
150°C
Yayın Yılı
2008
Collectorbase Capacitancemax
1.7pF
Terminal Kaplaması
Tin/Lead (Sn/Pb)
HTS Kodu
8541.21.00.75
Frequency Transition
900MHz
Power Max
350mW
Montaj Tipi
Through Hole
Çalışma Sıcaklığı
-55°C~150°C TJ
RoHS Durumu
RoHS Compliant
Collector Base Voltage Vcbo
30V
Dc Current Gainmin Hfe
50
Kılıf / Paket
TO-92
Dc Current Gain Hfe Min Ic Vce
50 @ 8mA 10V
Currentcollector Ic Max
50mA
ECCN Kodu
EAR99
Qualification Status
Not Qualified
Power Dissipation Max
625mW
Terminal Sayısı
3
Fabrika Tedarik Süresi
8 Weeks
Kurşunsuz Kodu
no
Transition Frequency
900MHz
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED

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