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2N5179

Central Semiconductor

2N5179

RF BJT Transistors

RoHS: Compliant

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Specifications

Collector Base Voltage Vcbo
20V
Power Dissipation Max
200mW
Terminal Pozisyonu
BOTTOM
JESD-609 Kodu
e0
Collectoremitter Breakdown Voltage
12V
Montaj
Through Hole
Terminal Sayısı
4
Fabrika Tedarik Süresi
12 Weeks
Terminal Kaplaması
Tin/Lead (Sn/Pb)
Element Configuration
Single
Gain Bandwidth Product
2 GHz
Emitter Base Voltage Vebo
2.5V
Transistor Application
AMPLIFIER
RoHS Durumu
RoHS Compliant
ECCN Kodu
EAR99
Transition Frequency
900MHz
Parça Durumu
Active
Gain
15 dB
Qualification Status
Not Qualified
Terminal Formu
WIRE
Hfemin
25
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Yayın Yılı
2013
Pin Sayısı
4
Kılıf / Paket
TO-72
Collectoremitter Saturation Voltage
400mV
Continuous Collector Current
50mA
Power Dissipation
200mW
Frekans
2GHz
Max Collector Current
50mA
Number Of Elements
1
Frequency Transition
2GHz
Maks. Çalışma Sıcaklığı
150°C
Kurşunsuz Kodu
no
Min. Çalışma Sıcaklığı
-65°C
Kurşunsuz
Lead Free
Collector Emitter Voltage Vceo
12V
Ambalaj
Bulk
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Polarity
NPN

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