NE02133-T1B

Specifications

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G3

Maximum Emitter Base Voltage V

3

Part Life Cycle Code

Obsolete

Standard Package Name

SOT

Maximum Collectoremitter Voltage V

12

Mounting

Surface Mount

Collectorbase Capacitancemax

1 pF

Terminal Pozisyonu

DUAL

Minimum Dc Current Gain

40@20mA@10V

Maximum Transition Frequency Mhz

4500(Typ)

Maximum Emitter Cutoff Current Na

1000

Collector Currentmax Ic

0.07 A

Eu Rohs

Not Compliant

Material

Si

Maximum Collectoremitter Voltage Range V

&l;20

Maximum Dc Collector Current Range A

0.06 to 0.12

Maximum Power Dissipation Mw

150

Automotive

No

Risk Rank

5.78

Maximum Operating Temperature C

200

Ihs Manufacturer

NEC ELECTRONICS AMERICA INC

Pin Sayısı

3

Additional Feature

LOW NOISE, HIGH RELIABILITY

Supplier Package

SOT-23

Number Of Elements

1

Package Style

SMALL OUTLINE

Maximum Junction Ambient Thermal Resistance

666°C/W

Minimum Operating Temperature C

-65

Üretici Parça No

NE02133-T1B

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

unknown

Ppap

No

Package Length

2.9

Maximum Collector Cutoff Current Na

1000

Operational Bias Conditions

10V/20mA

Lead Shape

Gull-wing

Collectoremitter Voltagemax

12 V

Pcb Changed

3

Typical Power Gain Db

15