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UPA812T-T1-A

CEL

UPA812T-T1-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Çalışma Sıcaklığı
150°C TJ
Montaj
Surface Mount
Noise Figure Db Typ F
1.4dB @ 1GHz
Collector Emitter Voltage Vceo
10V
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
70 @ 7mA 3V
Gain
12dB
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Collector Base Voltage Vcbo
20V
Frequency Transition
7GHz
Voltage Collector Emitter Breakdown Max
10V
Min. Çalışma Sıcaklığı
-65°C
Ambalaj
Tape & Reel (TR)
Parça Durumu
Obsolete
Continuous Collector Current
65mA
Kurşunsuz
Lead Free
Max Power Dissipation
200mW
Pin Sayısı
6
Polarity
NPN
Collectoremitter Breakdown Voltage
10V
Power Max
200mW
Maks. Çalışma Sıcaklığı
150°C
Radyasyon Dayanımı
No
Transistor Type
2 NPN (Dual)
RoHS Durumu
RoHS Compliant
Currentcollector Ic Max
65mA
Tedarikçi Cihaz Paketi
SOT-363
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Max Collector Current
65mA

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