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UPA810T-A

CEL

UPA810T-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Max Power Dissipation
200mW
Continuous Collector Current
100mA
Ambalaj
Bulk
Parça Durumu
Obsolete
Hfemin
70
Frequency Transition
4.5GHz
Collector Base Voltage Vcbo
20V
Gain
9dB
Temel Parça No
UPA810
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Dc Current Gain Hfe Min Ic Vce
70 @ 7mA 3V
Noise Figure Db Typ F
1.2dB @ 1GHz
Collector Emitter Voltage Vceo
12V
Element Configuration
Single
Montaj
Surface Mount
Çalışma Sıcaklığı
150°C TJ
Max Collector Current
100mA
Power Dissipation
200mW
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
RoHS Durumu
RoHS Compliant
Radyasyon Dayanımı
No
Emitter Base Voltage Vebo
3V
Transistor Type
2 NPN (Dual)
Collectoremitter Breakdown Voltage
12V
Polarity
NPN
Pin Sayısı
6

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