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NESG250134-T1-AZ

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NESG250134-T1-AZ

RF BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Voltage Collector Emitter Breakdown Max
9.2V
Output Power
800mW
Kurşunsuz
Lead Free
Max Frequency
10GHz
Tedarikçi Cihaz Paketi
3-PowerMiniMold
Montaj
Surface Mount
Max Collector Current
500mA
Continuous Collector Current
500mA
Min. Çalışma Sıcaklığı
-65°C
Currentcollector Ic Max
500mA
Power Dissipation
1.8W
Maks. Çalışma Sıcaklığı
150°C
Gain
23dB
Max Breakdown Voltage
9.2V
Element Configuration
Single
Collector Base Voltage Vcbo
20V
Frekans
900MHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
2.8V
Radyasyon Dayanımı
No
Temel Parça No
NESG2501
Dc Current Gain Hfe Min Ic Vce
80 @ 100mA 3V
Hfemin
80
Transistor Type
NPN
Pin Sayısı
3
Max Power Dissipation
1.5W
Kılıf / Paket
TO-243AA
Collectoremitter Breakdown Voltage
9.2V
Collector Emitter Voltage Vceo
9.2V
Montaj Tipi
Surface Mount
Ambalaj
Cut Tape (CT)
Frequency Transition
10GHz
Parça Durumu
Obsolete
Number Of Elements
1
Polarity
NPN
Power Max
1.5W

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