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NESG2107M33-A

CEL

NESG2107M33-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

RoHS Durumu
RoHS Compliant
Pin Sayısı
3
Max Power Dissipation
130mW
Transistor Type
NPN
Temel Parça No
NESG2107
Dc Current Gain Hfe Min Ic Vce
140 @ 5mA 1V
Kılıf / Paket
3-SMD, Flat Lead
Max Collector Current
100mA
Montaj
Surface Mount
Continuous Collector Current
100mA
Collectoremitter Breakdown Voltage
5V
Frequency Transition
10GHz
Ambalaj
Bulk
Montaj Tipi
Surface Mount
Çalışma Sıcaklığı
150°C TJ
Noise Figure Db Typ F
0.9dB ~ 1.5dB @ 2GHz
Parça Durumu
Obsolete
Gain
7dB ~ 10dB
Power Max
130mW
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V

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