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NESG2030M04-T2-A

CEL

NESG2030M04-T2-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Breakdown Voltage
2.3V
Gain
16dB
Maks. Çalışma Sıcaklığı
150°C
Noise Figure Db Typ F
0.9dB ~ 1.1dB @ 2GHz
Frekans
60GHz
Collector Base Voltage Vcbo
8V
Emitter Base Voltage Vebo
1.2V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Kurşunsuz
Lead Free
Output Power
60mW
RoHS Durumu
RoHS Compliant
Voltage Collector Emitter Breakdown Max
2.3V
Montaj
Surface Mount
Max Collector Current
65mA
Continuous Collector Current
35mA
Min. Çalışma Sıcaklığı
-65°C
Parça Durumu
Obsolete
Ambalaj
Cut Tape (CT)
Montaj Tipi
Surface Mount
Power Max
80mW
Transistor Type
NPN
Pin Sayısı
4
Max Power Dissipation
150mW
Temel Parça No
NESG2030
Dc Current Gain Hfe Min Ic Vce
200 @ 5mA 2V
Collectoremitter Breakdown Voltage
10V
Kılıf / Paket
SOT-343F

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