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NE856M02-AZ

CEL

NE856M02-AZ

RF BJT Transistors

RoHS: Compliant

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Specifications

Gain
12dB
Max Power Dissipation
1.2W
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Temel Parça No
NE856
Montaj
Surface Mount
Noise Figure Db Typ F
1.1dB @ 1GHz
Pin Sayısı
4
Montaj Tipi
Surface Mount
Polarity
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
100mA
Emitter Base Voltage Vebo
3V
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
20V
Collectoremitter Breakdown Voltage
12V
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Frequency Transition
6.5GHz
Hfemin
250
Transistor Type
NPN
Power Max
1.2W
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Voltage Collector Emitter Breakdown Max
12V
Max Collector Current
100mA
Continuous Collector Current
100mA
Kılıf / Paket
TO-243AA
Collector Emitter Voltage Vceo
12V
Tedarikçi Cihaz Paketi
SOT-89
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-65°C

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