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C3 ChipZentronix

CEL

NE85639-T1-R28-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Power Dissipation
200mW
Gain
13dB
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Tape & Reel (TR)
Noise Figure Db Typ F
1.1dB @ 1GHz
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Max Collector Current
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
100mA
Kılıf / Paket
TO-253-4, TO-253AA
Collectoremitter Breakdown Voltage
12V
Frequency Transition
9GHz
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant

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