Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Voltage Collector Emitter Breakdown Max
- 12V
- Transistor Type
- NPN
- Output Power
- 200mW
- Power Max
- 200mW
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 20mA 10V
- Max Collector Current
- 100mA
- Tedarikçi Cihaz Paketi
- SOT-143
- Kılıf / Paket
- TO-253-4, TO-253AA
- Collector Emitter Voltage Vceo
- 12V
- Maks. Çalışma Sıcaklığı
- 150°C
- Min. Çalışma Sıcaklığı
- -65°C
- Montaj
- Surface Mount
- Temel Parça No
- NE85639
- Noise Figure Db Typ F
- 1.1dB @ 1GHz
- Number Of Elements
- 1
- Pin Sayısı
- 4
- Polarity
- NPN
- Montaj Tipi
- Surface Mount
- Gain
- 13dB
- Max Power Dissipation
- 200mW
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 200mW
- Çalışma Sıcaklığı
- 150°C TJ
- Collector Base Voltage Vcbo
- 20V
- RoHS Durumu
- RoHS Compliant
- Kurşunsuz
- Lead Free
- Parça Durumu
- Obsolete
- Frekans
- 9GHz
- Frequency Transition
- 9GHz
- Currentcollector Ic Max
- 100mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Emitter Base Voltage Vebo
- 3V
- Max Frequency
- 9GHz
Related Products
Microsemi Corporation
0204-125
RF BJT Transistors
Microsemi Corporation
0510-50A
RF BJT Transistors
HARTING
09022326834
RF BJT Transistors
HARTING
09023646919
RF BJT Transistors
HARTING
09030006246
RF BJT Transistors
HARTING
09030006247
RF BJT Transistors
HARTING
09031466903
RF BJT Transistors
HARTING
09032322850222
RF BJT Transistors