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C3 ChipZentronix
NE85639-A

CEL

NE85639-A

RF BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Noise Figure Db Typ F
1.1dB @ 1GHz
Montaj
Surface Mount
Temel Parça No
NE85639
Montaj Tipi
Surface Mount
Pin Sayısı
4
Element Configuration
Single
Max Power Dissipation
200mW
Transistor Type
NPN
Gain
13dB
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Bulk
Collectoremitter Breakdown Voltage
12V
Collector Base Voltage Vcbo
20V
Frequency Transition
9GHz
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Continuous Collector Current
100mA
Max Collector Current
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Emitter Base Voltage Vebo
3V
Collector Emitter Voltage Vceo
12V
Kılıf / Paket
TO-253-4, TO-253AA

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