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NE85634-T1

CEL

NE85634-T1

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Collectorbase Capacitancemax
1pF
Qualification Status
Not Qualified
Voltage Collector Emitter Breakdown Max
12V
Power Max
2W
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Additional Feature
LOW NOISE
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Yüzey Montaj
YES
Polaritychannel Type
NPN
Case Connection
COLLECTOR
Kılıf / Paket
TO-243AA
Terminal Formu
FLAT
Noise Figure Db Typ F
1.4dB @ 1GHz
Temel Parça No
NE85634
Montaj Tipi
Surface Mount
Number Of Elements
1
Pin Sayısı
4
Configuration
SINGLE
REACH Uyumluluk Kodu
unknown
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
SINGLE
Transition Frequency
6500MHz
Frequency Transition
6.5GHz
Transistor Element Material
SILICON
RoHS Durumu
Non-RoHS Compliant
Terminal Sayısı
3
Parça Durumu
Obsolete
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Jesd30 Code
R-PSSO-F3
Transistor Application
AMPLIFIER

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