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NE85633-T1B-R23-A

CEL

NE85633-T1B-R23-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Pin Sayısı
3
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Temel Parça No
NE85633
Noise Figure Db Typ F
1.1dB @ 1GHz
Ambalaj
Tape & Reel (TR)
Çalışma Sıcaklığı
150°C TJ
Gain
11.5dB
Max Power Dissipation
200mW
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Frequency Transition
7GHz
Collectoremitter Breakdown Voltage
12V
Collector Base Voltage Vcbo
20V
Radyasyon Dayanımı
No
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Voltage Collector Emitter Breakdown Max
12V
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Transistor Type
NPN
Power Max
200mW
Tedarikçi Cihaz Paketi
SOT-23
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage Vceo
12V
Min. Çalışma Sıcaklığı
-65°C
Maks. Çalışma Sıcaklığı
150°C
Max Collector Current
100mA

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