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Specifications
- Collector Base Voltage Vcbo
- 20V
- Transistor Element Material
- SILICON
- Frekans
- 7GHz
- Terminal Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Currentcollector Ic Max
- 100mA
- ECCN Kodu
- EAR99
- Temperature Coefficient
- ±50ppm/°C
- Emitter Base Voltage Vebo
- 3V
- Uzunluk
- 2.9 mm
- Transistor Application
- AMPLIFIER
- Noise Figure Db Typ F
- 1.1dB @ 1GHz
- Terminal Formu
- GULL WING
- Ratings
- AEC-Q200
- Temel Ürün No
- RS73G1J
- Polarity
- NPN
- Number Of Elements
- 1
- Configuration
- SINGLE
- Max Power Dissipation
- 200mW
- Gain
- 11.5dB
- Çalışma Sıcaklığı
- 150°C TJ
- Güç (Watt)
- 0.2W, 1/5W
- Genişlik
- 1.5 mm
- Tolerans
- ±0.1%
- Continuous Collector Current
- 100 mA
- Collector Emitter Voltage Vceo
- 12V
- Maks. Oturma Yüksekliği
- 0.022 (0.55mm)
- Akım Değeri
- 100 mA
- Weight
- 1.437803 g
- Max Breakdown Voltage
- 12 V
- Output Power
- 200mW
- Transistor Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 20mA 10V
- Boyut / Ölçü
- 0.063 L x 0.031 W (1.60mm x 0.80mm)
- Transition Frequency
- 7000MHz
- Direnç
- 1.27 kOhms
- Ürün Durumu
- Active
- Collectoremitter Breakdown Voltage
- 12 V
- Frequency Transition
- 7GHz
- Pin Sayısı
- 3
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