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NE85633-R24-A

CEL

NE85633-R24-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Çalışma Sıcaklığı
150°C TJ
Ambalaj
Bulk
Max Power Dissipation
200mW
Gain
11.5dB
Polarity
NPN
Montaj Tipi
Surface Mount
Pin Sayısı
3
Noise Figure Db Typ F
1.1dB @ 1GHz
Montaj
Surface Mount
Temel Parça No
NE85633
Radyasyon Dayanımı
No
Emitter Base Voltage Vebo
3V
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
7GHz
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Collectoremitter Breakdown Voltage
12V
Collector Base Voltage Vcbo
20V
Dc Current Gain Hfe Min Ic Vce
80 @ 20mA 10V
Output Power
200mW
Element Configuration
Single
Power Max
200mW
Transistor Type
NPN
Weight
1.437803g
Voltage Collector Emitter Breakdown Max
12V
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-65°C
Tedarikçi Cihaz Paketi
SOT-23
Collector Emitter Voltage Vceo
12V
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Continuous Collector Current
100mA
Max Collector Current
100mA

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