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NE85633-R23-A

CEL

NE85633-R23-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Transistor Type
NPN
Power Max
200mW
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 10V
Voltage Collector Emitter Breakdown Max
12V
Max Collector Current
100mA
Tedarikçi Cihaz Paketi
SOT-23
Collector Emitter Voltage Vceo
12V
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-65°C
Gain
11.5dB
Max Power Dissipation
200mW
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Montaj
Surface Mount
Temel Parça No
NE85633
Noise Figure Db Typ F
1.1dB @ 1GHz
Pin Sayısı
3
Montaj Tipi
Surface Mount
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Radyasyon Dayanımı
No
Collectoremitter Breakdown Voltage
12V
Collector Base Voltage Vcbo
20V
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Frequency Transition
7GHz

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