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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 200mW
- HTS Kodu
- 8541.21.00.75
- Gain
- 11.5dB
- Çalışma Sıcaklığı
- 150°C TJ
- Power Dissipation
- 200mW
- Terminal Pozisyonu
- DUAL
- Ambalaj
- Strip
- Noise Figure Db Typ F
- 1.1dB @ 1GHz
- Terminal Formu
- GULL WING
- Number Of Elements
- 1
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- ECCN Kodu
- EAR99
- Jesd30 Code
- R-PDSO-G3
- Transistor Application
- AMPLIFIER
- Transition Frequency
- 7000MHz
- Collectoremitter Breakdown Voltage
- 12V
- Transistor Element Material
- SILICON
- Frequency Transition
- 7GHz
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Parça Durumu
- Obsolete
- RoHS Durumu
- RoHS Compliant
- Element Configuration
- Single
- Transistor Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 20mA 10V
- Qualification Status
- Not Qualified
- Collectorbase Capacitancemax
- 1pF
- Max Collector Current
- 100mA
- Continuous Collector Current
- 100mA
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Yüzey Montaj
- YES
- Polaritychannel Type
- NPN
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