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NE85619-T1

CEL

NE85619-T1

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectorbase Capacitancemax
1.5pF
Qualification Status
Not Qualified
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
80 @ 20mA 10V
Additional Feature
LOW NOISE
Highest Frequency Band
ULTRA HIGH FREQUENCY B
Polaritychannel Type
NPN
Max Collector Current
100mA
Kılıf / Paket
SOT-523
Terminal Formu
GULL WING
Noise Figure Db Typ F
1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
Montaj
Surface Mount
Temel Parça No
NE85619
Montaj Tipi
Surface Mount
Number Of Elements
1
Pin Sayısı
3
REACH Uyumluluk Kodu
unknown
HTS Kodu
8541.21.00.75
Max Power Dissipation
100mW
Configuration
SINGLE
Gain
6.5dB ~ 12.5dB
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Tape & Reel (TR)
Terminal Pozisyonu
DUAL
Collectoremitter Breakdown Voltage
12V
Transition Frequency
4500MHz
Transistor Element Material
SILICON
Frequency Transition
4.5GHz
RoHS Durumu
Non-RoHS Compliant
Terminal Sayısı
3
Parça Durumu
Obsolete
Currentcollector Ic Max
100mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Transistor Application
AMPLIFIER

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