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C3 ChipZentronix

CEL

NE851M33-T3-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Frequency Transition
4.5GHz
Collectoremitter Breakdown Voltage
5.5V
Ambalaj
Tape & Reel (TR)
Power Dissipation
130mW
Çalışma Sıcaklığı
150°C TJ
Seri
532
Max Power Dissipation
130mW
Ürün Tipi
TCXO
RoHS
Details
Pin Sayısı
3
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Temel Parça No
NE851
Noise Figure Db Typ F
1.9dB ~ 2.5dB @ 2GHz
Output Format
Clipped Sine Wave
Kılıf / Paket
3-SMD, Flat Lead
Continuous Collector Current
100mA
Max Collector Current
100mA
Fabrika Paket Adedi
1000
Dc Current Gain Hfe Min Ic Vce
100 @ 5mA 1V
Transistor Type
NPN
Element Configuration
Single

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