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C3 ChipZentronix

CEL

NE851M33-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
100mA
Continuous Collector Current
100mA
Kılıf / Paket
3-SMD, Flat Lead
Collector Emitter Voltage Vceo
5.5V
Hfemin
100
Transistor Type
NPN
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
100 @ 5mA 1V
Collector Base Voltage Vcbo
9V
Collectoremitter Breakdown Voltage
5.5V
Frekans
6.5GHz
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Frequency Transition
4.5GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V
Temel Parça No
NE851
Montaj
Surface Mount
Noise Figure Db Typ F
1.9dB ~ 2.5dB @ 2GHz
Pin Sayısı
3
Number Of Elements
1
Montaj Tipi
Surface Mount
Max Power Dissipation
130mW
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
130mW

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