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NE851M13-T3-A

CEL

NE851M13-T3-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Collectoremitter Breakdown Voltage
5.5V
Collector Base Voltage Vcbo
9V
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Parça Durumu
Obsolete
Frekans
6.5GHz
Frequency Transition
4.5GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V
Montaj
Surface Mount
Temel Parça No
NE851
Noise Figure Db Typ F
1.9dB ~ 2.5dB @ 2GHz
Number Of Elements
1
Pin Sayısı
3
Montaj Tipi
Surface Mount
Gain
4dB ~ 5.5dB @ 2GHZ
Max Power Dissipation
140mW
Ambalaj
Cut Tape (CT)
Power Dissipation
140mW
Continuous Collector Current
100mA
Max Collector Current
100mA
Collector Emitter Voltage Vceo
5.5V
Kılıf / Paket
SOT-3
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-65°C
Max Breakdown Voltage
5.5V
Transistor Type
NPN
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
100 @ 5mA 1V

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