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NE851M03-A

CEL

NE851M03-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Max Power Dissipation
200mW
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Temel Parça No
NE851
Montaj
Surface Mount
Noise Figure Db Typ F
1.9dB ~ 2.5dB @ 2GHz
Pin Sayısı
3
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
100mA
Emitter Base Voltage Vebo
1.5V
Collectoremitter Breakdown Voltage
5.5V
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Frequency Transition
4.5GHz
Hfemin
100
Transistor Type
NPN
Power Max
200mW
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
100 @ 5mA 1V
Voltage Collector Emitter Breakdown Max
5.5V
Max Collector Current
100mA
Continuous Collector Current
100mA
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Tedarikçi Cihaz Paketi
SOT-363

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