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C3 ChipZentronix
NE696M01-T1

CEL

NE696M01-T1

RF BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Max Power Dissipation
150mW
Power Dissipation
150mW
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Cut Tape (CT)
Paket
Tube
Noise Figure Db Typ F
1.6dB @ 2GHz
Montaj
Surface Mount
Temel Ürün No
PCF85
Temel Parça No
NE696
Montaj Tipi
Surface Mount
Memory Size
2Kbit
Number Of Elements
1
Pin Sayısı
6
Nem Hassasiyeti (MSL)
1 (Unlimited)
Memory Format
SRAM
Memory Types
Volatile
Emitter Base Voltage Vebo
2V
Collectoremitter Breakdown Voltage
6V
Ürün Durumu
Obsolete
Collector Base Voltage Vcbo
9V
RoHS Durumu
Non-RoHS Compliant
Frekans
14GHz
Parça Durumu
Obsolete
Element Configuration
Single
Transistor Type
NPN
Besleme Gerilimi
2.5V ~ 6V
Technology
SRAM
Clock Frequency
100 kHz
Memory Organization
256 x 8
Dc Current Gain Hfe Min Ic Vce
80 @ 10mA 3V
Memory Interface
I²C
Max Breakdown Voltage
6V
Continuous Collector Current
30mA
Max Collector Current
30mA
Tedarikçi Cihaz Paketi
8-DIP
Collector Emitter Voltage Vceo
6V
Kılıf / Paket
6-TSSOP, SC-88, SOT-363

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