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C3 ChipZentronix

CEL

NE685M33-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Transistor Type
NPN
Max Power Dissipation
130mW
Element Configuration
Single
Ambalaj
Bulk
Dc Current Gain Hfe Min Ic Vce
75 @ 10mA 3V
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
130mW
Temel Parça No
NE685
Montaj
Surface Mount
Noise Figure Db Typ F
1.5dB ~ 2.5dB @ 2GHz
Pin Sayısı
3
Montaj Tipi
Surface Mount
Max Collector Current
30mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Continuous Collector Current
30mA
Currentcollector Ic Max
30mA
Kılıf / Paket
3-SMD, Flat Lead
Emitter Base Voltage Vebo
2V
Collectoremitter Breakdown Voltage
6V
Frekans
12GHz
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant

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