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C3 ChipZentronix
NE68530-T1

CEL

NE68530-T1

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

REACH Uyumluluk Kodu
unknown
HTS Kodu
8541.21.00.75
Max Power Dissipation
150mW
Gain
7dB
Power Dissipation
150mW
Çalışma Sıcaklığı
150°C TJ
Terminal Pozisyonu
DUAL
Ambalaj
Cut Tape (CT)
Terminal Formu
GULL WING
Noise Figure Db Typ F
1.5dB ~ 2.5dB @ 2GHz
Montaj
Surface Mount
Temel Parça No
NE68530
Montaj Tipi
Surface Mount
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Jesd30 Code
R-PDSO-G3
Transistor Application
AMPLIFIER
Collectoremitter Breakdown Voltage
6V
Transition Frequency
12000MHz
Transistor Element Material
SILICON
Frequency Transition
12GHz
RoHS Durumu
Non-RoHS Compliant
Parça Durumu
Obsolete
Terminal Sayısı
3
Element Configuration
Single
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
75 @ 10mA 3V
Additional Feature
LOW NOISE
Qualification Status
Not Qualified
Collectorbase Capacitancemax
0.7pF
Max Breakdown Voltage
6V
Continuous Collector Current
30mA
Max Collector Current
30mA
Kılıf / Paket
SC-70, SOT-323
Highest Frequency Band
S B
Polaritychannel Type
NPN

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