+90 533 300 32 01
C3 ChipZentronix
NE68139-T1-A

CEL

NE68139-T1-A

RF BJT Transistors

RoHS: Compliant

Request a quote for pricing

Priced by quantity and lead time.

Shipping

Same-day dispatch from stock

Genuine parts

Verified sourcing

RoHS

Compliant

Support

Technical team support

Specifications

Power Max
200mW
Element Configuration
Single
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 8V
Voltage Collector Emitter Breakdown Max
10V
Max Breakdown Voltage
10V
Max Collector Current
65mA
Continuous Collector Current
65mA
Min. Çalışma Sıcaklığı
-55°C
Maks. Çalışma Sıcaklığı
150°C
Kılıf / Paket
TO-253-4, TO-253AA
Collector Emitter Voltage Vceo
10V
Tedarikçi Cihaz Paketi
SOT-143
Max Power Dissipation
200mW
Gain
13.5dB
Seri
*
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
200mW
Paket
Retail Package
Ambalaj
Tape & Reel (TR)
Noise Figure Db Typ F
1.2dB @ 1GHz
Temel Parça No
NE68139
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Polarity
NPN
Pin Sayısı
4
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
65mA
Emitter Base Voltage Vebo
1.5V
Max Frequency
9GHz
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
20V
Collectoremitter Breakdown Voltage
10V
Ürün Durumu
Active
Frequency Transition
9GHz
Parça Durumu
Obsolete
Frekans
9GHz
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free

Related Products

  • Microsemi Corporation

    0204-125

    RF BJT Transistors
  • Microsemi Corporation

    0510-50A

    RF BJT Transistors
  • HARTING

    09022326834

    RF BJT Transistors
  • HARTING

    09023646919

    RF BJT Transistors
  • HARTING

    09030006246

    RF BJT Transistors
  • HARTING

    09030006247

    RF BJT Transistors
  • HARTING

    09031466903

    RF BJT Transistors
  • HARTING

    09032322850222

    RF BJT Transistors
  • Fast Delivery

    Same-day prep and shipping from stock

    Genuine Parts

    Sourced from authorized channels

    Datasheet

    Technical documents for each part

    Technical Support

    Help before and after the sale