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NE68139-T1

CEL

NE68139-T1

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Çalışma Sıcaklığı
150°C TJ
Power Dissipation
200mW
Terminal Pozisyonu
DUAL
Ambalaj
Cut Tape (CT)
Max Power Dissipation
200mW
Gain
13.5dB
Montaj Tipi
Surface Mount
Pin Sayısı
4
Number Of Elements
1
Terminal Formu
GULL WING
Noise Figure Db Typ F
1.2dB ~ 2dB @ 1GHz
Temel Parça No
NE68139
Montaj
Surface Mount
Transistor Application
AMPLIFIER
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Frequency Transition
9GHz
Parça Durumu
Obsolete
Terminal Sayısı
4
RoHS Durumu
Non-RoHS Compliant
Transition Frequency
9000MHz
Collectoremitter Breakdown Voltage
10V
Dc Current Gain Hfe Min Ic Vce
50 @ 7mA 3V
Additional Feature
LOW NOISE
Element Configuration
Single
Transistor Type
NPN
Max Breakdown Voltage
10V
Qualification Status
Not Qualified
Collectorbase Capacitancemax
0.8pF
Kılıf / Paket
TO-253-4, TO-253AA
Max Collector Current
65mA
Continuous Collector Current
65mA
Polaritychannel Type
NPN
Case Connection
COLLECTOR
Highest Frequency Band
ULTRA HIGH FREQUENCY B

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