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NE68139-A

CEL

NE68139-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Tedarikçi Cihaz Paketi
SOT-143
Collector Emitter Voltage Vceo
10V
Kılıf / Paket
TO-253-4, TO-253AA
Min. Çalışma Sıcaklığı
-55°C
Maks. Çalışma Sıcaklığı
150°C
Continuous Collector Current
65mA
Max Collector Current
65mA
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 8V
Transistor Type
NPN
Element Configuration
Single
Power Max
200mW
Voltage Collector Emitter Breakdown Max
10V
Radyasyon Dayanımı
No
Emitter Base Voltage Vebo
1.5V
Currentcollector Ic Max
65mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
RoHS Durumu
RoHS Compliant
Parça Durumu
Obsolete
Frequency Transition
9GHz
Collectoremitter Breakdown Voltage
10V
Collector Base Voltage Vcbo
20V
Ambalaj
Bulk
Çalışma Sıcaklığı
150°C TJ
Gain
13.5dB
Max Power Dissipation
200mW
Pin Sayısı
4
Polarity
NPN
Montaj Tipi
Surface Mount
Montaj
Surface Mount
Temel Parça No
NE68139
Noise Figure Db Typ F
1.2dB @ 1GHz

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