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NE68133-A

CEL

NE68133-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Output Power
200mW
Element Configuration
Single
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 8V
Weight
200.998119mg
Max Collector Current
65mA
Continuous Collector Current
65mA
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
Collector Emitter Voltage Vceo
10V
Max Power Dissipation
200mW
Gain
13dB
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Strip
Noise Figure Db Typ F
1.2dB @ 1GHz
Temel Parça No
NE68133
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Pin Sayısı
3
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V
Collectoremitter Breakdown Voltage
10V
Frequency Transition
9GHz
Parça Durumu
Obsolete
Kurşunsuz
Lead Free
RoHS Durumu
RoHS Compliant

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