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NE68119-T1

CEL

NE68119-T1

RF BJT Transistors

RoHS: Compliant

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Specifications

ECCN Kodu
EAR99
Currentcollector Ic Max
65mA
Nem Hassasiyeti (MSL)
1 (Unlimited)
Transistor Application
AMPLIFIER
Jesd30 Code
R-PDSO-G3
Transition Frequency
7000MHz
RoHS Durumu
Non-RoHS Compliant
Parça Durumu
Obsolete
Terminal Sayısı
3
Frequency Transition
7GHz
Transistor Element Material
SILICON
Gain
10dB ~ 14dB
REACH Uyumluluk Kodu
unknown
HTS Kodu
8541.21.00.75
Configuration
SINGLE
Terminal Pozisyonu
DUAL
Ambalaj
Cut Tape (CT)
Power Dissipation
100mW
Çalışma Sıcaklığı
150°C TJ
Temel Parça No
NE68119
Terminal Formu
GULL WING
Noise Figure Db Typ F
1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
Number Of Elements
1
Montaj Tipi
Surface Mount
Kılıf / Paket
SOT-523
Highest Frequency Band
L B
Yüzey Montaj
YES
Polaritychannel Type
NPN
Transistor Type
NPN
Additional Feature
LOW NOISE
Dc Current Gain Hfe Min Ic Vce
80 @ 7mA 3V
Collectorbase Capacitancemax
0.9pF
Qualification Status
Not Qualified
Voltage Collector Emitter Breakdown Max
10V

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