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NE68118-T1-A

CEL

NE68118-T1-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Gain
14dB
Max Power Dissipation
150mW
Ambalaj
Tape & Reel (TR)
Paket
Tape & Reel (TR)
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
150mW
Montaj
Surface Mount
Noise Figure Db Typ F
1.2dB @ 1GHz
Pin Sayısı
4
Montaj Tipi
Surface Mount
Polarity
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
65mA
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
20V
Ürün Durumu
Obsolete
Collectoremitter Breakdown Voltage
10V
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Frequency Transition
9GHz
Transistor Type
NPN
Power Max
150mW
Output Power
150mW
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 8V
Voltage Collector Emitter Breakdown Max
10V
Max Collector Current
65mA
Continuous Collector Current
65mA
Kılıf / Paket
SC-82A, SOT-343
Collector Emitter Voltage Vceo
10V
Tedarikçi Cihaz Paketi
SOT-343
Maks. Çalışma Sıcaklığı
150°C
Min. Çalışma Sıcaklığı
-55°C

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