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NE68019-T1

CEL

NE68019-T1

RF BJT Transistors

RoHS: Compliant

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Specifications

Max Collector Current
35mA
Kılıf / Paket
SOT-523
Highest Frequency Band
L B
Polaritychannel Type
NPN
Power Max
100mW
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
80 @ 5mA 3V
Additional Feature
LOW NOISE
Collectorbase Capacitancemax
0.7pF
Qualification Status
Not Qualified
Max Breakdown Voltage
10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Jesd30 Code
R-PDSO-G3
Transistor Application
AMPLIFIER
Collectoremitter Breakdown Voltage
10V
Transition Frequency
10000MHz
Frequency Transition
10GHz
Transistor Element Material
SILICON
RoHS Durumu
Non-RoHS Compliant
Terminal Sayısı
3
Parça Durumu
Obsolete
HTS Kodu
8541.21.00.75
Max Power Dissipation
100mW
Configuration
SINGLE
Gain
9.6dB ~ 13.5dB
Çalışma Sıcaklığı
150°C TJ
Ambalaj
Cut Tape (CT)
Terminal Pozisyonu
DUAL
Noise Figure Db Typ F
1.7dB ~ 1.9dB @ 1GHz ~ 2GHz
Terminal Formu
GULL WING
Montaj
Surface Mount
Temel Parça No
NE68019
Montaj Tipi
Surface Mount
Number Of Elements
1

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