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NE678M04-T2-A

CEL

NE678M04-T2-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Gain
13.5dB
Max Power Dissipation
205mW
Ambalaj
Tape & Reel (TR)
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
205mW
Temel Parça No
NE678
Montaj
Surface Mount
Noise Figure Db Typ F
1.7dB @ 2GHz
Pin Sayısı
4
Number Of Elements
1
Montaj Tipi
Surface Mount
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
2V
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
9V
Collectoremitter Breakdown Voltage
6V
Frekans
12GHz
Parça Durumu
Obsolete
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Transistor Type
NPN
Output Power
205mW
Element Configuration
Single
Dc Current Gain Hfe Min Ic Vce
75 @ 30mA 3V
Max Breakdown Voltage
6V
Max Collector Current
100mA
Continuous Collector Current
100mA
Kılıf / Paket
SOT-343F
Collector Emitter Voltage Vceo
6V

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