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C3 ChipZentronix
NE66219-A

CEL

NE66219-A

RF BJT Transistors

RoHS: Compliant

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Specifications

Element Configuration
Single
Transistor Type
NPN
Dc Current Gain Hfe Min Ic Vce
60 @ 5mA 2V
Max Collector Current
35mA
Continuous Collector Current
35mA
Kılıf / Paket
SOT-523
Collector Emitter Voltage Vceo
3.3V
Max Power Dissipation
115mW
Gain
14dB
Çalışma Sıcaklığı
150°C TJ
Power Dissipation
115mW
Ambalaj
Bulk
Noise Figure Db Typ F
1.2dB @ 2GHz
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Pin Sayısı
3
Number Of Elements
1
Nem Hassasiyeti (MSL)
1 (Unlimited)
Emitter Base Voltage Vebo
1.5V
Radyasyon Dayanımı
No
Collector Base Voltage Vcbo
15V
Collectoremitter Breakdown Voltage
3.3V
Parça Durumu
Obsolete
Frekans
21GHz
RoHS Durumu
RoHS Compliant

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