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NE58219-T1-A

CEL

NE58219-T1-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Çalışma Sıcaklığı
125°C (TJ)
Power Dissipation
100mW
Paket
Tape & Reel (TR)
Ambalaj
Cut Tape (CT)
Max Power Dissipation
100mW
Gain
5dB
Montaj Tipi
Surface Mount
Pin Sayısı
3
Number Of Elements
1
Temel Parça No
NE58219
Montaj
Surface Mount
Emitter Base Voltage Vebo
3V
Radyasyon Dayanımı
No
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
60mA
Frequency Transition
5GHz
Parça Durumu
Obsolete
Frekans
5GHz
RoHS Durumu
RoHS Compliant
Kurşunsuz
Lead Free
Collector Base Voltage Vcbo
20V
Collectoremitter Breakdown Voltage
12V
Ürün Durumu
Last Time Buy
Dc Current Gain Hfe Min Ic Vce
60 @ 5mA 5V
Power Max
100mW
Output Power
100mW
Element Configuration
Single
Hfemin
120
Transistor Type
NPN
Voltage Collector Emitter Breakdown Max
12V
Max Breakdown Voltage
12V
Min. Çalışma Sıcaklığı
-55°C
Maks. Çalışma Sıcaklığı
125°C
Kılıf / Paket
SC-75, SOT-416
Collector Emitter Voltage Vceo
12V
Tedarikçi Cihaz Paketi
SC-75 (USM)
Max Collector Current
60mA
Continuous Collector Current
60mA

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