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NE462M02-T1-AZ

CEL

NE462M02-T1-AZ

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Maks. Çalışma Sıcaklığı
150°C
Parça Durumu
Obsolete
Power Max
1.8W
Emitter Base Voltage Vebo
2.5V
Max Collector Current
150mA
Çalışma Sıcaklığı
150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Currentcollector Ic Max
150mA
Contact Plating
Tin
Collector Base Voltage Vcbo
25V
Transistor Type
NPN
Max Power Dissipation
1.8W
Montaj Tipi
Surface Mount
Collector Emitter Voltage Vceo
12V
Frequency Transition
6GHz
RoHS Durumu
RoHS Compliant
Collectoremitter Breakdown Voltage
12V
Montaj
Surface Mount
Gain
10dB
Ambalaj
Tape & Reel (TR)
Noise Figure Db Typ F
3.5dB @ 1GHz
Kılıf / Paket
TO-243AA
Dc Current Gain Hfe Min Ic Vce
50 @ 50mA 5V
Pin Sayısı
4
Min. Çalışma Sıcaklığı
-65°C
Voltage Collector Emitter Breakdown Max
12V

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