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2SC3583-T1B-A

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2SC3583-T1B-A

RF BJT Transistors

RoHS: Compliant

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Compliant

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Specifications

Contact Plating
Tin
Max Collector Current
65mA
Transistor Type
NPN
Parça Durumu
Obsolete
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Emitter Base Voltage Vebo
1.5V
Çalışma Sıcaklığı
150°C TJ
Collector Emitter Voltage Vceo
10V
Ambalaj
Tape & Reel (TR)
Max Power Dissipation
200mW
Collector Base Voltage Vcbo
20V
Noise Figure Db Typ F
1.2dB @ 1GHz
Nem Hassasiyeti (MSL)
1 (Unlimited)
Frequency Transition
9GHz
Gain
13dB
Power Max
200mW
Dc Current Gain Hfe Min Ic Vce
50 @ 20mA 8V
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
RoHS Durumu
RoHS Compliant
Pin Sayısı
3

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