Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Qg Gate Charge
- 108 nC
- Tip
- MOSFET
- Vds Drainsource Breakdown Voltage
- 500 V
- Minimum Operating Temperature
- - 55 C
- Configuration
- Single
- Transistor Type
- 1 N-Channel
- Typical Turnon Delay Time
- 16 ns
- Ambalaj
- Tube
- Rds On Drainsource Resistance
- 120 mOhms
- Transistor Polarity
- N-Channel
- Maks. Çalışma Sıcaklığı
- + 175 C
- Montaj Stili
- Through Hole
- Birim Ağırlık
- 0.211644 oz
- Id Continuous Drain Current
- 44 A
- Genişlik
- 4.82 mm
- Rise Time
- 84 ns
- Kılıf / Paket
- TO-247-3
- Fabrika Paket Adedi
- 450
- Number Of Channels
- 1 Channel
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Seri
- FDH44N50
- Yükseklik
- 20.82 mm
- Ürün Tipi
- MOSFET
- Uzunluk
- 15.87 mm
- Pd Power Dissipation
- 750 W
- RoHS
- Details
- Channel Mode
- Enhancement
- Typical Turnoff Delay Time
- 45 ns
- Forward Transconductance Min
- 11 S
- Technology
- Si
- Vgs Gatesource Voltage
- - 30 V, + 30 V