NE5511279A

Specifications

Maximum Idss Ua

0.1

Package Height

0.9

Hts

8541.29.00.95

Typical Power Gain Db

18.5

Parça Durumu

Obsolete

Standard Package Name

Module

Maximum Gate Source Voltage V

6

Maximum Drain Source Voltage V

20

Pcb Changed

4

Material

Si

Package Length

4.4(Max)

Process Technology

LDMOS

Configuration

Single

Number Of Elements Per Chip

1

Military

No

Minimum Operating Temperature C

-55

Eccn Us

EAR99

Maximum Operating Temperature C

125

Typical Forward Transconductance S

2.3

Maximum Gate Threshold Voltage V

2

Maximum Gate Source Leakage Current Na

100

Supplier Package

Case 79A

Channel Type

N

RoHS Durumu

RoHS non-compliant

Package Width

4.2(Max)

Maximum Power Dissipation Mw

20000

Pin Sayısı

4

Mounting

Surface Mount

Maximum Continuous Drain Current A

3

Maximum Frequency Mhz

900