Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Transistor Type
- E-pHEMT
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Noise Figure
- 1dB
- Terminal Kaplaması
- Tin (Sn)
- Drain Currentmax Abs Id
- 0.05A
- Polaritychannel Type
- N-CHANNEL
- Reach Svhc
- No SVHC
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 8
- Voltage Test
- 2V
- Operating Mode
- ENHANCEMENT MODE
- Akım Değeri
- 50mA
- Transistor Element Material
- GALLIUM ARSENIDE
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2008
- Fet Technology
- HIGH ELECTRON MOBILITY
- Gate To Source Voltage Vgs
- 1V
- Yükseklik
- 275μm
- Gain
- 11dB
- Ambalaj
- Strip
- Transistor Application
- AMPLIFIER
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Element Configuration
- Single
- Parça Durumu
- Obsolete
- Uzunluk
- 1.09mm
- Kılıf / Paket
- 0402 (1005 Metric)
- Tepe Reflow Sıcaklığı (°C)
- 260
- Genişlik
- 585μm
- RoHS Durumu
- RoHS Compliant
- Jesd30 Code
- R-XDCC-N8
- Continuous Drain Current Id
- 50mA
- Frekans
- 12GHz
- Terminal
- SMD/SMT
- Case Connection
- SOURCE
- Current Test
- 20mA
- Drain To Source Voltage Vdss
- 5V
- Max Power Dissipation
- 250mW
- Number Of Elements
- 1
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