Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Output
- 24.5dBm
- Transistor Type
- E-pHEMT
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Obsolete
- Kılıf / Paket
- 8-WFDFN Exposed Pad
- Maks. Çalışma Sıcaklığı
- 150°C
- Fabrika Tedarik Süresi
- 12 Weeks
- Terminal Formu
- NO LEAD
- Montaj
- Surface Mount
- Yayın Yılı
- 2014
- Pin Sayısı
- 8
- Noise Figure
- 0.6dB
- Configuration
- SINGLE
- Voltage Rated Dc
- 4V
- Case Connection
- SOURCE
- Transistor Application
- AMPLIFIER
- Current Test
- 135mA
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 1W
- RoHS Durumu
- RoHS Compliant
- Qualification Status
- Not Qualified
- Ds Breakdown Voltagemin
- 7V
- Gain
- 20dB
- Akım Değeri
- 300mA
- Fet Technology
- HIGH ELECTRON MOBILITY
- Drain To Source Voltage Vdss
- 4V
- Contact Plating
- Tin
- Additional Feature
- LOW NOISE
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 8
- ECCN Kodu
- EAR99
- Gate To Source Voltage Vgs
- 1V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 1W
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Polaritychannel Type
- N-CHANNEL
- Drain Currentmax Abs Id
- 0.3A
- Continuous Drain Current Id
- 300mA
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