Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Frekans
- 2GHz
- Min. Çalışma Sıcaklığı
- -65°C
- Kurşunsuz
- Lead Free
- Continuous Drain Current Id
- 1A
- Polaritychannel Type
- N-CHANNEL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain Currentmax Abs Id
- 1A
- ECCN Kodu
- EAR99
- Terminal Sayısı
- 8
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Power Dissipation
- 3W
- Gate To Source Voltage Vgs
- 1V
- Contact Plating
- Tin
- Additional Feature
- LOW NOISE
- Fet Technology
- HIGH ELECTRON MOBILITY
- Drain To Source Voltage Vdss
- 4.5V
- Gain
- 14.8dB
- Akım Değeri
- 1A
- Qualification Status
- Not Qualified
- RoHS Durumu
- RoHS Compliant
- Ds Breakdown Voltagemin
- 7V
- Power Dissipation
- 3W
- Transistor Application
- AMPLIFIER
- Operating Mode
- ENHANCEMENT MODE
- Current Test
- 200mA
- Configuration
- SINGLE
- Noise Figure
- 1.4dB
- Pin Sayısı
- 8
- Voltage Rated Dc
- 4.5V
- Case Connection
- SOURCE
- Yayın Yılı
- 2014
- Montaj
- Surface Mount
- Maks. Çalışma Sıcaklığı
- 150°C
- Fabrika Tedarik Süresi
- 6 Weeks
- Parça Durumu
- Obsolete
- Kılıf / Paket
- 8-WFDFN Exposed Pad
- Terminal Formu
- NO LEAD
- Transistor Type
- E-pHEMT
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